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| www..com SP8M21 Transistors 4V Drive Nch+Pch MOSFET SP8M21 Structure Silicon N-channel MOSFET / Silicon P-channel MOSFET Dimensions (Unit : mm) SOP8 5.0 0.4 (8) (5) 1.75 1pin mark 1.27 0.2 Each lead has same dimensions Applications Switching Package specifications Package Type SP8M21 Code Basic ordering unit (pieces) Taping TB 2500 Inner circuit (8) (7) (6) (5) 2 2 (1) Tr1 Source (2) Tr1 Gate (3) Tr2 Source (4) Tr2 Gate (5) Tr2 Drain (6) Tr2 Drain (7) Tr1 Drain (8) Tr1 Drain 1 1 (1) (2) (3) (4) 1 ESD PROTECTION DIODE 2 BODY DIODE Absolute maximum ratings (Ta=25C) Parameter Drain-source voltage Gate-source voltage Drain current Source current (Body diode) Total power dissipation Channel temperature Storage temperature 1 Pw10s, Duty cycle1% 2 Mounted on a ceramic board. Symbol VDSS VGSS ID IDP 1 IS ISP 1 PD 2 Tch Tstg Continuous Pulsed Continuous Pulsed Limits Tr1 : N-ch Tr2 : P-ch 45 -45 20 -20 4.0 6.0 16 24 1.0 -1.0 24 -16 2.0 1.4 150 -55 to +150 Unit V V A A A A W / TOTAL W / ELEMENT C C Rev.A 0.4Min. Features 1) Low on-resistance. 2) Built-in G-S protection diode. 3) Small and surface mount package (SOP8). (1) (4) 3.9 6.0 1/7 SP8M21 Transistors N-ch Electrical characteristics (Ta=25C) Parameter Symbol IGSS Gate-source leakage Drain-source breakdown voltage V(BR) DSS Zero gate voltage drain current IDSS Gate threshold voltage VGS (th) Static drain-source on-state resistance Forward transfer admittance Input capacitance Output capacitance Reverse transfer capacitance Turn-on delay time Rise time Turn-off delay time Fall time Total gate charge Gate-source charge Gate-drain charge Pulsed RDS (on) Yfs Ciss Coss Crss td (on) tr td (off) tf Qg Qgs Qgd Min. - 45 - 1.0 - - - 6.0 - - - - - - - - - - Typ. - - - - 18 24 26 - 1400 310 175 19 30 72 27 15.4 3.7 6.5 Max. 10 - 1 2.5 25 34 37 - - - - - - - - 21.6 - - Unit A V A V m m m S pF pF pF ns ns ns ns nC nC nC Conditions VGS=20V, VDS=0V ID= 1mA, VGS=0V VDS= 45V, VGS=0V VDS= 10V, ID= 1mA ID= 6.0A, VGS= 10V ID= 6.0A, VGS= 4.5V ID= 6.0A, VGS= 4.0V VDS= 10V, ID= 6.0A VDS= 10V VGS=0V f=1MHz VDD 25V ID= 3.0A VGS= 10V RL= 8 RG=10 VDD 25V, VGS= 5V ID= 6.0A RL= 4, RG= 10 Body diode characteristics (Source-drain) (Ta=25C) Parameter Forward voltage Pulsed Symbol VSD Min. - Typ. - Max. 1.2 Unit V Conditions IS= 6.0A, VGS=0V Rev.A 2/7 SP8M21 Transistors P-ch Electrical characteristics (Ta=25C) Parameter Symbol Min. IGSS - Gate-source leakage Drain-source breakdown voltage V(BR) DSS -45 Zero gate voltage drain current - IDSS Gate threshold voltage VGS (th) -1.0 - Static drain-source on-state - RDS (on) resistance - Yfs 6.0 Forward transfer admittance - Ciss Input capacitance Output capacitance Coss - Reverse transfer capacitance - Crss Turn-on delay time - td (on) Rise time - tr Turn-off delay time - td (off) Fall time - tf Total gate charge - Qg Gate-source charge - Qgs Gate-drain charge - Qgd Pulsed Typ. - - - - 33 43 47 - 2400 320 200 23 23 90 22 20.0 6.5 7.5 Max. -10 - -1 -2.5 46 60 65 - - - - - - - - 28.0 - - Unit A V A V m m m S pF pF pF ns ns ns ns nC nC nC Conditions VGS= -20V, VDS=0V ID= -1mA, VGS=0V VDS= -45V, VGS=0V VDS= -10V, ID= -1mA ID= -4.0A, VGS= -10V ID= -4.0A, VGS= -4.5V ID= -4.0A, VGS= -4.0V VDS= -10V, ID= -4.0A VDS= -10V VGS= 0V f=1MHz VDD -25V ID= -2.0A VGS= -10V RL= 12.5 RG= 10 VDD -25V, VGS= -5V ID= -4.0A RL= 6, RG= 10 Body diode characteristics (Source-drain) (Ta=25C) Parameter Forward voltage Pulsed Symbol VSD Min. - Typ. - Max. -1.2 Unit V Conditions IS= -4.0A, VGS=0V Rev.A 3/7 SP8M21 Transistors N-ch Electrical characteristic curves 10000 Ta=25C f=1MHz VGS=0V 10000 10 GATE-SOURCE VOLTAGE : VGS (V) SWITCHING TIME : t (ns) CAPACITANCE : C (pF) 1000 td(off) 1000 Ciss tf Ta=25C VDD=25V VGS=10V RG=10 Pulsed Ta=25C 9 VDD=25V 8 7 6 5 4 3 2 1 0 0 5 10 15 20 25 30 ID=6.0A RG=10 Pulsed 100 td(on) Coss 100 Crss 10 tr 10 0.1 1 10 100 1 0.01 0.1 1 10 DRAIN-SOURCE VOLTAGE : VDS (V) DRAIN CURRENT : ID (A) TOTAL GATE CHARGE : Qg (nC) Fig.1 Typical Capacitance vs. Drain-Source Voltage 10 VDS= 10V Pulsed Fig.2 Switching Characteristics Fig.3 Dynamic Input Characteristics STATIC DRAIN-SOURCE ON-STATE RESISTANCE : RDS (on) (m) 200 Ta=25C Pulsed 10 VGS=0V Pulsed DRAIN CURRENT : ID (A) 1 Ta=125C Ta=75C Ta=25C Ta= -25C 150 SOURCE CURRENT : IS (A) 1 Ta=125C Ta=75C Ta=25C Ta= -25C 0.1 100 0.1 0.01 50 ID=3.0A ID=6.0A 0.001 0.5 1.0 1.5 2.0 2.5 3.0 3.5 0 0 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 0.01 0.0 0.5 1.0 1.5 GATE-SOURCE VOLTAGE : VGS (V) GATE-SOURCE VOLTAGE : VGS (V) SOURCE-DRAIN VOLTAGE : VSD (V) Fig.4 Typical Transfer Characteristics Fig.5 Static Drain-Source On-State Resistance vs. Gate-Source Voltage Fig.6 Source Current vs. Source-Drain Voltage STATIC DRAIN-SOURCE ON-STATE RESISTANCE : RDS(ON) (m) STATIC DRAIN-SOURCE ON-STATE RESISTANCE : RDS(ON) (m) VGS=10V Pulsed Ta=125C Ta=75C Ta=25C Ta= -25C VGS=4.5V Pulsed Ta=125C Ta=75C Ta=25C Ta= -25C STATIC DRAIN-SOURCE ON-STATE RESISTANCE : RDS(ON) (m) 1000 1000 1000 VGS=4V Pulsed Ta=125C Ta=75C Ta=25C 100 100 100 Ta= -25C 10 10 10 1 0.01 0.1 1 10 1 0.01 0.1 1 10 1 0.01 0.1 1 10 DRAIN CURRENT : ID (A) DRAIN CURRENT : ID (A) DRAIN CURRENT : ID (A) Fig.7 Static Drain-Source On-State Resistance vs. Drain Current ( ) Fig.8 Static Drain-Source On-State Resistance vs. Drain Current ( ) Fig.9 Static Drain-Source On-State Resistance vs. Drain Current ( ) Rev.A 4/7 SP8M21 Transistors STATIC DRAIN-SOURCE ON-STATE RESISTANCE : RDS(ON) (m) 1000 Ta=25C Pulsed 100 VGS=4.0V VGS=4.5V VGS=10V 10 1 0.01 0.1 1 10 DRAIN CURRENT : ID (A) Fig.10 Static Drain-Source On-State Resistance vs. Drain Current ( ) Rev.A 5/7 SP8M21 Transistors P-ch Electrical characteristic curves GATE-SOURCE VOLTAGE : -VGS (V) 10000 Ta=25C f=1MHz VGS=0V 10000 Ta=25C VDD= -25V VGS= -10V RG=10 Pulsed 10 9 VDD= -25V ID= -4.0A RG=10 8 Pulsed Ta=25C SWITCHING TIME : t (ns) CAPACITANCE : C (pF) Ciss 1000 td(off) tf 1000 7 6 5 4 3 2 1 0 0 5 10 15 20 25 30 35 40 100 td(on) Coss 100 Crss 10 tr 10 0.1 1 10 100 1 0.01 0.1 1 10 DRAIN-SOURCE VOLTAGE : -VDS (V) DRAIN CURRENT : -ID (A) TOTAL GATE CHARGE : Qg (nC) Fig.1 Typical Capacitance vs. Drain-Source Voltage Fig.2 Switching Characteristics Fig.3 Dynamic Input Characteristics STATIC DRAIN-SOURCE ON-STATE RESISTANCE : RDS (on) (m) 10 VDS= -10V Pulsed 200 10 SOURCE CURRENT : -IS (A) Ta=25C Pulsed VGS=0V Pulsed Ta=125C Ta=75C Ta=25C Ta= -25C DRAIN CURRENT : -ID (A) 1 Ta=125C Ta=75C Ta=25C Ta= -25C 150 1 0.1 100 ID= -4.0A 0.1 0.01 50 ID= -2.0A 0.001 0.5 1.0 1.5 2.0 2.5 3.0 3.5 0 0 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 0.01 0.0 0.5 1.0 1.5 GATE-SOURCE VOLTAGE : -VGS (V) GATE-SOURCE VOLTAGE : -VGS (V) SOURCE-DRAIN VOLTAGE : -VSD (V) Fig.4 Typical Transfer Characteristics Fig.5 Static Drain-Source On-State Resistance vs. Gate-Source Voltage Fig.6 Source Current vs. Source-Drain Voltage STATIC DRAIN-SOURCE ON-STATE RESISTANCE : RDS(ON) (m) STATIC DRAIN-SOURCE ON-STATE RESISTANCE : RDS(ON) (m) STATIC DRAIN-SOURCE ON-STATE RESISTANCE : RDS(ON) (m) 1000 Ta=125C Ta=75C Ta=25C Ta= -25C VGS= -10V Pulsed 1000 Ta=125C Ta=75C Ta=25C Ta= -25C VGS= -4.5V Pulsed 1000 Ta=125C Ta=75C Ta=25C VGS= -4V Pulsed 100 100 100 Ta= -25C 10 10 10 1 0.01 0.1 1 10 1 0.01 0.1 1 10 1 0.01 0.1 1 10 DRAIN CURRENT : -ID (A) DRAIN CURRENT : -ID (A) DRAIN CURRENT : -ID (A) Fig.7 Static Drain-Source On-State Resistance vs. Drain Current ( ) Fig.8 Static Drain-Source On-State Resistance vs. Drain Current ( ) Fig.9 Static Drain-Source On-State Resistance vs. Drain Current ( ) Rev.A 6/7 SP8M21 Transistors STATIC DRAIN-SOURCE ON-STATE RESISTANCE : RDS(ON) (m) 1000 Ta=25C Pulsed VGS= -4.0V VGS= -4.5V VGS= -10V 100 10 1 0.01 0.1 1 10 DRAIN CURRENT : -ID (A) Fig.10 Static Drain-Source On-State Resistance vs. Drain Current ( ) Rev.A 7/7 Appendix Notes No technical content pages of this document may be reproduced in any form or transmitted by any means without prior permission of ROHM CO.,LTD. The contents described herein are subject to change without notice. The specifications for the product described in this document are for reference only. Upon actual use, therefore, please request that specifications to be separately delivered. Application circuit diagrams and circuit constants contained herein are shown as examples of standard use and operation. Please pay careful attention to the peripheral conditions when designing circuits and deciding upon circuit constants in the set. Any data, including, but not limited to application circuit diagrams information, described herein are intended only as illustrations of such devices and not as the specifications for such devices. ROHM CO.,LTD. disclaims any warranty that any use of such devices shall be free from infringement of any third party's intellectual property rights or other proprietary rights, and further, assumes no liability of whatsoever nature in the event of any such infringement, or arising from or connected with or related to the use of such devices. Upon the sale of any such devices, other than for buyer's right to use such devices itself, resell or otherwise dispose of the same, no express or implied right or license to practice or commercially exploit any intellectual property rights or other proprietary rights owned or controlled by ROHM CO., LTD. is granted to any such buyer. Products listed in this document are no antiradiation design. The products listed in this document are designed to be used with ordinary electronic equipment or devices (such as audio visual equipment, office-automation equipment, communications devices, electrical appliances and electronic toys). Should you intend to use these products with equipment or devices which require an extremely high level of reliability and the malfunction of with would directly endanger human life (such as medical instruments, transportation equipment, aerospace machinery, nuclear-reactor controllers, fuel controllers and other safety devices), please be sure to consult with our sales representative in advance. About Export Control Order in Japan Products described herein are the objects of controlled goods in Annex 1 (Item 16) of Export Trade Control Order in Japan. In case of export from Japan, please confirm if it applies to "objective" criteria or an "informed" (by MITI clause) on the basis of "catch all controls for Non-Proliferation of Weapons of Mass Destruction. Appendix1-Rev1.1 |
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